WFU4N60 Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
Same Type
as DUT
VD D
VG S
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
(Driver)
IS D
(DUT)
VD S
(DUT)
Gate Pulse Width
D=
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
di/dt
IR M
Body Diode Reverse Current
Body Diode Recovery dv/dt
VS D
VD D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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