MTD20N06HD
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (3) V(BR)DSS
60
—
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
—
—
IGSS
—
(Cpk ≥ 2.0) (3) VGS(th)
2.0
—
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(Cpk ≥ 2.0) (3) RDS(on)
—
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
—
—
Forward Transconductance
(VDS = 4.0 Vdc, ID = 10 Adc)
gFS
5.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge
(See Figure 7)
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
QT
—
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(Cpk ≥ 8.0) (3)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
—
Reverse Recovery Time
(See Figure 14)
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
—
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
—
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk = Absolute Value of Spec (Spec–AVG/3.516 µA).
Typ
Max
Unit
Vdc
—
—
54
—
mV/°C
µAdc
—
10
—
100
nAdc
—
100
—
7.0
0.035
—
—
6.0
4.0
—
0.045
1.2
1.1
—
Vdc
mV/°C
Ohm
Vdc
mhos
607
840
pF
218
290
55
110
9.2
18
ns
61.2
122
19
38
36
72
17
24
nC
3.4
—
7.75
—
7.46
—
Vdc
0.95
1.0
0.88
—
35.7
—
ns
24
—
11.7
—
0.055
—
µC
nH
4.5
—
nH
7.5
—
2
Motorola TMOS Power MOSFET Transistor Device Data