IRFR9120N View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFR9120N

HEXFET® Power MOSFET

International Rectifier 

IRFR/U9120N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

-100 ––– ––– V VGS = 0V, ID = -250µA

––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA

––– ––– 0.48 Ω VGS = -10V, ID = -3.9A „

-2.0 ––– -4.0 V VDS = VGS, ID = -250µA

1.4 ––– ––– S VDS = -50V, ID = -4.0A†

––– ––– -25 µA VDS = -100V, VGS = 0V

––– ––– -250

VDS = -80V, VGS = 0V, TJ = 150°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

––– ––– 27

ID = -4.0A

––– ––– 5.0

––– ––– 15

nC VDS = -80V

VGS = -10V, See Fig. 6 and 13 „†

––– 14 –––

VDD = -50V

––– 47 ––– ns ID = -4.0A

––– 28 –––

RG = 12 Ω

––– 31 –––

RD =12 Ω, See Fig. 10 „†

Between lead,

D

––– 4.5 –––

6mm (0.25in.)

nH

from package

G

––– 7.5 –––

and center of die contact…

S

––– 350 –––

VGS = 0V

––– 110 ––– pF VDS = -25V

––– 70 –––

ƒ = 1.0MHz, See Fig. 5†

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– -6.6 A showing the

integral reverse

G

––– ––– -26

p-n junction diode.

S

––– ––– -1.6 V TJ = 25°C, IS = -3.9A, VGS = 0V „

––– 100 150 ns TJ = 25°C, IF = -4.0A

––– 420 630 nC di/dt = 100A/µs „†

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 13mH

RG = 25Ω, IAS = -3.9A. (See Figure 12)

ƒ ISD ≤ -4.0A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

…This is applied for I-PAK, LS of D-PAK is measured between

lead and center of die contact

† Uses IRF9520N data and test conditions.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

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