IRF9Z34NSTRL View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF9Z34NSTRL

HEXFET® Power MOSFET

International Rectifier 

IRF9Z34NS/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

-55 ––– ––– V VGS = 0V, ID = -250µA

––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA…

––– ––– 0.10 Ω VGS = -10V, ID = -10A „

-2.0 ––– -4.0 V VDS = VGS, ID = -250µA

4.2 ––– ––– S VDS = -25V, ID = -10A…

––– ––– -25 µA VDS = -55V, VGS = 0V

––– ––– -250

VDS = -44V, VGS = 0V, TJ = 150°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

––– ––– 35

ID = -10A

––– ––– 7.9

––– ––– 16

nC VDS = -44V

VGS = -10V, See Fig. 6 and 13 „…

––– 13 –––

VDD = -28V

––– 55 ––– ns ID = -10A

––– 30 –––

RG = 13Ω

––– 41 –––

RD = 2.6Ω, See Fig. 10 „

Between lead,

––– 7.5 ––– nH and center of die contact

––– 620 –––

VGS = 0V

––– 280 ––– pF VDS = -25V

––– 140 –––

ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

V SD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– -19

A showing the

integral reverse

G

––– ––– -68

p-n junction diode.

S

––– ––– -1.6 V TJ = 25°C, IS = -10A, VGS = 0V „

––– 54 82 ns TJ = 25°C, IF = -10A

––– 110 160 nC di/dt = -100A/µs „…

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

‚ Starting TJ = 25°C, L = 3.6mH

RG = 25Ω, IAS = -10A. (See Figure 12)

… Uses IRF9Z34N data and test conditions

ƒ ISD ≤ -10A, di/dt ≤ -290A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

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