IRFB/IRFS/IRFSL59N10D
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
100
โโโ
โโโ
3.0
โโโ
โโโ
โโโ
โโโ
โโโ โโโ V
0.11 โโโ V/ยฐC
โโโ 0.025 โฆ
โโโ 5.5 V
โโโ 25 ยตA
โโโ 250
โโโ 100
nA
โโโ -100
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mA
VGS = 10V, ID = 35.4A ย
VDS = VGS, ID = 250ยตA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150ยฐC
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
18 โโโ โโโ S VDS = 50V, ID = 35.4A
โโโ 76 114
ID = 35.4A
โโโ 24 36 nC VDS = 80V
โโโ 36 54
VGS = 10V, ย
โโโ 16 โโโ
VDD = 50V
โโโ 90 โโโ ns ID = 35.4A
โโโ 20 โโโ
RG = 2.5โฆ
โโโ 12 โโโ
VGS = 10V ย
โโโ 2450 โโโ
VGS = 0V
โโโ 740 โโโ
VDS = 25V
โโโ 190 โโโ pF ฦ = 1.0MHzย
โโโ 3370 โโโ
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
โโโ 390 โโโ
VGS = 0V, VDS = 80V, ฦ = 1.0MHz
โโโ 690 โโโ
VGS = 0V, VDS = 0V to 80V ย
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energyย
IAR
Avalanche Currentย
EAR
Repetitive Avalanche Energyย
Thermal Resistance
โโโ
510
mJ
โโโ
35.4
A
โโโ
20
mJ
Parameter
Typ.
Max.
Units
RฮธJC
Junction-to-Case
RฮธCS
Case-to-Sink, Flat, Greased Surface ย
RฮธJA
Junction-to-Ambientย
RฮธJA
Junction-to-Ambientย
Diode Characteristics
โโโ
0.75
0.50
โโโ
ยฐC/W
โโโ
62
โโโ
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
MOSFET symbol
D
โโโ โโโ 59
A showing the
โโโ โโโ 236
integral reverse
G
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 35.4A, VGS = 0V ย
โโโ 130 200 ns TJ = 25ยฐC, IF = 35.4A
โโโ 0.75 1.1 ยตC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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