IRF1310N View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF1310N

HEXFET® Power MOSFET

International Rectifier 

IRF1310N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

100 ––– ––– V VGS = 0V, ID = 250µA

––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 0.036 Ω VGS = 10V, ID = 22A „

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

14 ––– ––– S VDS = 25V, ID = 22A

––– ––– 25 µA VDS = 100V, VGS = 0V

––– ––– 250

VDS = 80V, VGS = 0V, TJ = 150°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

––– ––– 110

ID = 22A

––– ––– 15 nC VDS = 80V

––– ––– 58

VGS = 10V, See Fig. 6 and 13 „

––– 11 –––

VDD = 50V

–––

–––

56 –––

45 –––

ns

ID = 22A

RG = 3.6Ω

––– 40 –––

RD = 2.9Ω, See Fig. 10 „

Between lead,

D

––– 4.5 –––

6mm (0.25in.)

nH

from package

G

––– 7.5 –––

and center of die contact

S

––– 1900 –––

VGS = 0V

––– 450 ––– pF VDS = 25V

––– 230 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) †

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 42

––– ––– 140

––– ––– 1.3

––– 180 270

––– 1.2 1.8

MOSFET symbol

D

A showing the

integral reverse

G

p-n junction diode.

S

V TJ = 25°C, IS = 22A, VGS = 0V „

ns TJ = 25°C, IF = 22A

µC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 1.7mH

RG = 25Ω, IAS = 22A. (See Figure 12)

ƒ ISD ≤ 22A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

Share Link: