IRF3415S View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRF3415S Datasheet PDF : 11 Pages
| |||
IRF3415S/L
6000
5000
4000
3000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
Coss
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
TJ = 175 oC
10
TJ = 25 oC
1
0.1
0.2
VGS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
20
ID = 22A
16
VDS = 120V
VDS = 75V
VDS = 30V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1ms
TC = 25 o C
TJ = 175 o C
Single Pulse
1
1
10
10ms
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
Share Link: 