IRFB/IRFS/IRFSL33N15D
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150
โโโ
โโโ
3.0
โโโ
โโโ
โโโ
โโโ
โโโ โโโ V
0.18 โโโ V/ยฐC
โโโ 0.056 โฆ
โโโ 5.5 V
โโโ 25 ยตA
โโโ 250
โโโ 100
nA
โโโ -100
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mA ย
VGS = 10V, ID = 20A ย
VDS = VGS, ID = 250ยตA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150ยฐC
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
14 โโโ โโโ
โโโ 60 90
โโโ 17 26
โโโ 27 41
โโโ 13 โโโ
โโโ 38 โโโ
โโโ 23 โโโ
โโโ 21 โโโ
โโโ 2020 โโโ
โโโ 400 โโโ
โโโ 91 โโโ
โโโ 2440 โโโ
โโโ 180 โโโ
โโโ 320 โโโ
S VDS = 50V, ID = 20A
ID = 20A
nC VDS = 120V
VGS = 10V, ยย
VDD = 75V
ns ID = 20A
RG = 3.6โฆ
VGS = 10Vโฆ ย
VGS = 0V
VDS = 25V
pF ฦ = 1.0MHzย
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
VGS = 0V, VDS = 120V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 120V ย
Parameter
EAS
Single Pulse Avalanche Energyยย
IAR
Avalanche Currentย
EAR
Repetitive Avalanche Energyย
Thermal Resistance
Typ.
โโโ
โโโ
โโโ
Max.
330
20
17
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RฮธJC
Junction-to-Case
RฮธCS
Case-to-Sink, Flat, Greased Surface ย
RฮธJA
Junction-to-Ambientย
RฮธJA
Junction-to-Ambientย
Diode Characteristics
โโโ
0.50
โโโ
โโโ
0.90
โโโ
ยฐC/W
62
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ยย
MOSFET symbol
D
โโโ โโโ 33
A showing the
โโโ โโโ 130
integral reverse
G
p-n junction diode.
S
VSD
Diode Forward Voltage
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 20A, VGS = 0V ย
trr
Reverse Recovery Time
โโโ 150 โโโ ns TJ = 25ยฐC, IF = 20A
Qrr
Reverse RecoveryCharge
โโโ 920 โโโ nC di/dt = 100A/ยตs ย
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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