IRFU330 View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFU330

HEXFET® Power MOSFET

International Rectifier 

IRFR/U3303

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Ciss

Coss

Crss

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max.

30 ––– –––

––– 0.032 –––

––– ––– 0.031

2.0 ––– 4.0

9.3 ––– –––

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

––– ––– 29

––– ––– 7.3

––– ––– 13

––– 11 –––

––– 99 –––

––– 16 –––

––– 28 –––

––– 4.5 –––

––– 7.5 –––

––– 750 –––

––– 400 –––

––– 140 –––

Units

V

V/°C

Ω

V

S

µA

nA

nC

ns

nH

pF

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 18A „

VDS = VGS, ID = 250µA

VDS = 25V, ID = 18A

VDS = 30V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = 18A

VDS = 24V

VGS = 10V, See Fig. 6 and 13 „

VDD = 15V

ID = 18A

RG = 13Ω

RD = 0.8Ω, See Fig. 10 „

Between lead,

D

6mm (0.25in.)

from package

G

and center of die contact†

S

VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 33… A showing the

integral reverse

G

––– ––– 120

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „

––– 53 80 ns TJ = 25°C, IF = 18A

––– 94 140 nC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 590µH

RG = 25Ω, IAS = 18A. (See Figure 12)

ƒ ISD ≤ 18A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… Caculated continuous current based on maximum allowable junction

temperature; Package limitation current = 20A.

† This is applied for I-PAK, LS of D-PAK is measured between

lead and center of die contact

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

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