FB11N50A View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

FB11N50A

HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A

International Rectifier 

IRFB11N5OA

Static @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

RDS(on)

VGS(th)

IDSS

IGSS

Parameter

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Min.

500

–––

2.0

–––

–––

–––

–––

Typ.

–––

–––

–––

–––

–––

–––

–––

Max.

–––

0.52

4.0

25

250

100

-100

Units

V

Ω

V

µA

nA

Conditions

VGS = 0V, ID = 250µA

VGS = 10V, ID = 6.6A „

VDS = VGS, ID = 250µA

VDS = 500V, VGS = 0V

VDS = 400V, VGS = 0V, TJ = 150°C

VGS = 30V

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

gfs

Forward Transconductance

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

td(on)

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

tr

td(off)

Rise Time

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss

Output Capacitance

Coss

Output Capacitance

Coss eff. Effective Output Capacitance

Avalanche Characteristics

Min. Typ. Max. Units

Conditions

6.1 ––– ––– S VDS = 50V, ID = 6.6A

––– ––– 52

ID = 11A

––– ––– 13 nC VDS = 400V

––– ––– 18

VGS = 10V, See Fig. 6 and 13 „

––– 14 –––

VDD = 250V

––– 35 ––– ns ID = 11A

––– 32 –––

RG = 9.1Ω

––– 28 –––

RD = 22Ω,See Fig. 10 „

––– 1423 –––

VGS = 0V

––– 208 –––

VDS = 25V

––– 8.1 ––– pF ƒ = 1.0MHz, See Fig. 5

––– 2000 –––

––– 55 –––

––– 97 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 400V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 400V …

Parameter

EAS

Single Pulse Avalanche Energy‚

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

Thermal Resistance

Typ.

–––

–––

–––

Max.

275

11

17

Units

mJ

A

mJ

Parameter

RθJC

RθCS

RθJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Diode Characteristics

Typ.

–––

0.50

–––

Max.

0.75

–––

62

Units

°C/W

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

2

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 11

A showing the

integral reverse

G

––– ––– 44

p-n junction diode.

S

––– ––– 1.5 V TJ = 25°C, IS = 11A, VGS = 0V „

––– 510 770 ns TJ = 25°C, IF = 11A

––– 3.4 5.1 µC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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