IRFP064N View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFP064N

HEXFET® Power MOSFET

International Rectifier 

IRFP064N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Ciss

Coss

Crss

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max.

55 ––– –––

––– 0.057 –––

––– ––– 0.008

2.0 ––– 4.0

42 ––– –––

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

––– ––– 170

––– ––– 32

––– ––– 74

––– 14 –––

––– 100 –––

––– 43 –––

––– 70 –––

––– 5.0 –––

––– 13 –––

––– 4000 –––

––– 1300 –––

––– 480 –––

Units

V

V/°C

Ω

V

S

µA

nA

nC

ns

nH

pF

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA…

VGS = 10V, ID = 59A „

VDS = VGS, ID = 250µA

VDS = 25V, ID = 59A…

VDS = 55V, VGS = 0V

VDS = 44V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = 59A

VDS = 44V

VGS = 10V, See Fig. 6 and 13 „…

VDD = 28V

ID = 59A

RG = 2.5Ω

RD = 0.39Ω, See Fig. 10„…

Between lead,

D

6mm (0.25in.)

from package

G

and center of die contact

S

VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 110†

showing the

––– ––– 390

integral reverse

G

p-n junction diode.

S

––– ––– 1.3

––– 110 170

––– 450 680

V TJ = 25°C, IS = 59A, VGS = 0V „

ns TJ = 25°C, IF = 59A

nC di/dt = 100A/µs „…

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ VDD = 25V, starting TJ = 25°C, L = 190µH

RG = 25Ω, IAS = 59A. (See Figure 12)

ƒ ISD ≤ 59A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… Uses IRF3205 data and test conditions

† Caculated continuous current based on maximum allowable

junction temperature; for recommended current-handling of the

package refer to Design Tip # 93-4

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