IRFR/U2405
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance ย
Min. Typ. Max. Units
Conditions
55 โโโ โโโ
โโโ 0.052 โโโ
โโโ 0.0118 0.016
2.0 โโโ 4.0
V
V/ยฐC
โฆ
V
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mA
VGS = 10V, ID = 34A ย
VDS = 10V, ID = 250ยตA
30 โโโ โโโ S VDS = 25V, ID = 34A
โโโ โโโ 20 ยตA VDS = 55V, VGS = 0V
โโโ โโโ 250
VDS = 44V, VGS = 0V, TJ = 150ยฐC
โโโ โโโ 200 nA VGS = 20V
โโโ โโโ -200
VGS = -20V
โโโ 70 110
ID = 34A
โโโ 16 23
โโโ 19 29
nC VDS = 44V
VGS = 10Vย
โโโ 15 โโโ
VDD = 28V
โโโ 130 โโโ ns ID = 34A
โโโ 55 โโโ
RG = 6.8โฆ
โโโ 78 โโโ
VGS = 10V ย
Between lead,
D
โโโ 4.5 โโโ
6mm (0.25in.)
nH
from package
G
โโโ 7.5 โโโ
and center of die contact
S
โโโ 2430 โโโ
VGS = 0V
โโโ 470 โโโ pF VDS = 25V
โโโ 100 โโโ
ฦ = 1.0MHz, See Fig. 5
โโโ 2040 โโโ
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
โโโ 350 โโโ
โโโ 350 โโโ
VGS = 0V, VDS = 44V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature.
ย Starting TJ = 25ยฐC, L = 0.22mH
RG = 25โฆ, IAS = 34A.
ย ISD โค 34A, di/dt โค 190A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 56ย A showing the
integral reverse
G
โโโ โโโ 220
p-n junction diode.
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 34A, VGS = 0V ย
โโโ 62 93 ns TJ = 25ยฐC, IF = 34A
โโโ 170 260 nC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ย Pulse width โค 300ยตs; duty cycle โค 2%.
ย
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ย Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
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