IRCZ24 View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRCZ24

HEXFET® Power MOSFET

International Rectifier 

IRCZ24

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Min. Typ. Max. Units

Conditions

60 ––– ––– V VGS = 0V, ID = 250µA

––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 0.10 Ω VGS = 10V, ID = 10A„

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

5.8 ––– ––– S VDS = 25V, ID = 10A

––– ––– 25

VDS = 60V, VGS = 0V

––– ––– 250

VDS = 48V, VGS = 0V, TJ = 150°C

––– ––– 100

VGS = 20V

––– ––– -100

VGS = -20V

––– ––– 24

ID = 17A

––– ––– 6.3

––– ––– 9.0

nC VDS = 48V

VGS = 10V, See Fig. 6 and 13 „

––– 12 –––

VDD = 30V

––– 59 –––

––– 25 –––

––– 38 –––

ID = 17A

RG = 18Ω

RD = 1.7Ω, See Fig. 10 „

LD

Internal Drain Inductance

LC

Internal Source Inductance

––– 4.5 –––

––– 7.5 –––

Between lead,

6 mm (0.25 in.)

nH from package

and center of

die contact

Ciss

Input Capacitance

––– 720 –––

VGS = 0V

Coss

Output Capacitance

––– 360 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 75 –––

ƒ = 1.0MHz, See Fig. 5

r

Current Sensing Ratio

740 ––– 820 ––– ID = 17A, VGS = 10V

Coss

Output Capacitance of Sensing Cells ––– 14 ––– pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 17

showing the

A

integral reverse

G

––– ––– 68

p-n junction diode.

S

––– ––– 1.5 V TJ = 25°C, IS = 17A, VGS = 0V „

––– 87 180 ns TJ = 25°C, IF = 17A

––– 0.29 0.60 nC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ƒ ISD ≤ 17A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

‚ VDD = 25V, starting TJ = 25°C, L = 0.024mH

RG = 25Ω, IAS = 17A. (See Figure 12)

C-2

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

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