BC489(2001) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
BC489 Datasheet PDF : 8 Pages
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ON Semiconductort
High Current Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
80
80
5.0
0.5
625
5.0
1.5
12
–55 to +150
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watt
mW/°C
°C
Symbol
Max
RqJA
200
RqJC
83.3
Unit
°C/W
°C/W
BC489, A, B
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
80
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
80
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 5.0
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
—
ON CHARACTERISTICS*
DC Current Gain
(IC = 10 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)*
BC489
BC489A
BC489B
hFE
40
60
100
160
15
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
100
nAdc
—
—
—
—
400
160
250
260
400
—
—
Publication Order Number:
BC489/D
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