BC489(2001) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

BC489
(Rev.:2001)

High Current Transistors

ON Semiconductor 

-0.8

-1.2

-1.6

-2.0

RθVB for VBE

BC489, A, B

-1.0

TJ = 25°C

-0.8

VBE(sat) @ IC/IB = 10

-0.6

VBE(on) @ VCE = -1.0 V

-0.4

-2.4

-2.8

0.5 1.0 2.0

5.0 10 20

50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 10. Base–Emitter Temperature Coefficient

-0.2

VCE(sat) @ IC/IB = 10

0

-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

-1.0

-0.8

TJ = 25°C

-0.8

-1.2

-0.6

-0.4

IC = -10 mA -50 mA -100 mA

-0.2

-250 mA -500 mA

-1.6

-2.0

RθVB for VBE

-2.4

0

-0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50

IB, BASE CURRENT (mA)

Figure 12. Collector Saturation Region

-2.8

-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

IC, COLLECTOR CURRENT (mA)

Figure 13. Base–Emitter Temperature Coefficient

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