Philips Semiconductors
High dynamic range dual LNA MMIC
Preliminary specification
CGY2105ATS
0.0
handbook, halfpage
s12
(dB)
−5.0
−10.0
−15.0
−20.0
−25.0
1.00
1.50
FCA104
2.00
2.50
f (GHz)
Vsupply = 5 V; Vneg = −5 V.
Fig.9 Reverse transmission coefficient s12 as a
function of the frequency.
0.0
handbook, halfpage
s22
(dB)
−5.0
−10.0
−15.0
−20.0
−25.0
1.00
1.50
FCA105
2.00
2.50
f (GHz)
Vsupply = 5 V; Vneg = −5 V.
Fig.10 Output reflection coefficient s22 as a
function of the frequency.
0.0
handbook, halfpage
ISOi
(dB)
−10.0
FCA106
20.0
handbook, halfpage
Po
(dBm)
10.0
FCA107
−20.0
0.0
−30.0
1.00
1.50
2.00
2.50
f (GHz)
−10.0
−20.0
−10.0
0.0
10.0
Pi (dBm)
Vsupply = 5 V; Vneg = −5 V.
Fig.11 Isolation between RF inputs as a function of
the frequency.
Vsupply = 5 V; Vneg = −5 V.
Fig.12 RF output power as a function of the
RF input power.
1999 Dec 23
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