BZX84C2V4LT1 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
BZX84C2V4LT1 Datasheet PDF : 7 Pages
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BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device*
BZX84C2V4LT1, G
Device
Marking
Z11
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3)
Min Nom Max
2.2
2.4
2.6
ZZT1
(W)
@ IZT1 =
5 mA
100
VZ2 (V)
@ IZT2 = 1 mA
(Note 3)
Min Max
1.7
2.1
ZZT2
(W)
@ IZT2 =
1 mA
VZ3 (V)
@ IZT3 = 20 mA
(Note 3)
Min Max
ZZT3
(W)
@ IZT3 =
20 mA
600
2.6
3.2
50
Max Reverse
Leakage
Current
IR
mA
@
VR
Volts
qVZ
(mV/k)
@ IZT1 = 5 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
50
1
−3.5
0
450
BZX84C2V7LT1, G
Z12
2.5
2.7
2.9
100
1.9
2.4
600
3
3.6
50
20
1
−3.5
0
450
BZX84C3V0LT1, G
Z13
2.8
3
3.2
95
2.1
2.7
600
3.3
3.9
50
10
1
−3.5
0
450
BZX84C3V3LT1, G
Z14
3.1
3.3
3.5
95
2.3
2.9
600
3.6
4.2
40
5
1
−3.5
0
450
BZX84C3V6LT1, G
Z15
3.4
3.6
3.8
90
2.7
3.3
600
3.9
4.5
40
5
1
−3.5
0
450
BZX84C3V9LT1, G
Z16
3.7
3.9
4.1
90
2.9
3.5
600
4.1
4.7
30
3
1
−3.5 −2.5
450
BZX84C4V3LT1, G
W9
4
4.3
4.6
90
3.3
4
600
4.4
5.1
30
3
1
−3.5
0
450
BZX84C4V7LT1, G
Z1
4.4
4.7
5
80
3.7
4.7
500
4.5
5.4
15
3
2
−3.5 0.2
260
BZX84C5V1LT1, G
Z2
4.8
5.1
5.4
60
4.2
5.3
480
5
5.9
15
2
2
−2.7 1.2
225
BZX84C5V6LT1, G
Z3
5.2
5.6
6
40
4.8
6
400
5.2
6.3
10
1
2
−2.0 2.5
200
BZX84C6V2LT1, G
Z4
5.8
6.2
6.6
10
5.6
6.6
150
5.8
6.8
6
3
4
0.4
3.7
185
BZX84C6V8LT1, G
Z5
6.4
6.8
7.2
15
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
BZX84C7V5LT1, G
Z6
7
7.5
7.9
15
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
BZX84C8V2LT1, G
Z7
7.7
8.2
8.7
15
7.6
8.7
80
7.7
8.8
6
0.7
5
3.2
6.2
135
BZX84C9V1LT1, G
Z8
8.5
9.1
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6
3.8
7.0
130
BZX84C10LT1, G
Z9
9.4
10 10.6
20
9.3 10.6
150
9.4 10.7
10
0.2
7
4.5
8.0
130
BZX84C11LT1, G
Y1
10.4 11 11.6
20
10.2 11.6
150
10.4 11.8
10
0.1
8
5.4
9.0
130
BZX84C12LT1, G
Y2
11.4 12 12.7
25
11.2 12.7
150
11.4 12.9
10
0.1
8
6.0 10.0
130
BZX84C13LT1, G
Y3
12.4 13 14.1
30
12.3
14
170
12.5 14.2
15
0.1
8
7.0 11.0
120
BZX84C15LT1, G
Y4
13.8 15 15.6
30
13.7 15.5
200
13.9 15.7
20
0.05 10.5 9.2 13.0
110
BZX84C16LT1, G
Y5
15.3 16 17.1
40
15.2
17
200
15.4 17.2
20
0.05 11.2 10.4 14.0
105
BZX84C18LT1, G
Y6
16.8 18 19.1
45
16.7
19
225
16.9 19.2
20
0.05 12.6 12.4 16.0
100
BZX84C20LT1, G
Y7
18.8 20 21.2
55
18.7 21.1
225
18.9 21.4
20
0.05 14 14.4 18.0
85
BZX84C22LT1, G
Y8
20.8 22 23.3
55
20.7 23.2
250
20.9 23.4
25
0.05 15.4 16.4 20.0
85
BZX84C24LT1, G
Y9
22.8 24 25.6
70
22.7 25.5
250
22.9 25.7
25
0.05 16.8 18.4 22.0
80
Device
BZX84C27LT1, G
Device
Marking
Y10
VZ1 Below
@ IZT1 = 2 mA
Min Nom Max
25.1 27 28.9
ZZT1
Below
@ IZT1 =
2 mA
80
VZ2 Below
@ IZT2 = 0.1 m-
A
Min Max
25
28.9
ZZT2
Below
@ IZT4 =
0.5 mA
VZ3 Below
@ IZT3 = 10 mA
Min Max
300
25.2 29.3
ZZT3
Below
@ IZT3 =
10 mA
45
Max Reverse
Leakage
Current
IR
mA
@
VR
(V)
0.05 18.9
qVZ
(mV/k) Below
@ IZT1 = 2 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
21.4 25.3
70
BZX84C30LT1, G
Y11
28
30
32
80
27.8
32
300
28.1 32.4
50
0.05 21 24.4 29.4
70
BZX84C33LT1, G
Y12
31
33
35
80
30.8
35
325
31.1 35.4
55
0.05 23.1 27.4 33.4
70
BZX84C36LT1, G
Y13
34
36
38
90
33.8
38
350
34.1 38.4
60
0.05 25.2 30.4 37.4
70
BZX84C39LT1, G
Y14
37
39
41
130
36.7
41
350
37.1 41.5
70
0.05 27.3 33.4 41.2
45
BZX84C43LT1, G
Y15
40
43
46
150
39.7
46
375
40.1 46.5
80
0.05 30.1 37.6 46.6
40
BZX84C47LT1, G
Y16
44
47
50
170
43.7
50
375
44.1 50.5
90
0.05 32.9 42.0 51.8
40
BZX84C51LT1, G
Y17
48
51
54
180
47.6
54
400
48.1 54.6
100
0.05 35.7 46.6 57.2
40
BZX84C56LT1, G
Y18
52
56
60
200
51.5
60
425
52.1 60.8
110
0.05 39.2 52.2 63.8
40
BZX84C62LT1, G
Y19
58
62
66
215
57.4
66
450
58.2 67
120
0.05 43.4 58.8 71.6
35
BZX84C68LT1, G
Y20
64
68
72
240
63.4
72
475
64.2 73.2
130
0.05 47.6 65.6 79.8
35
BZX84C75LT1, G
Y21
70
75
79
255
69.4
79
500
70.3 80.2
140
0.05 52.5 73.4 88.6
35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
http://onsemi.com
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