RC5061 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

RC5061

High Performance Programmable Synchronous DC-DC Controller for Multi-Voltage Platforms

Fairchild Semiconductor 

PRODUCT SPECIFICATION

RC5061

Table 3. RC5061 Application Bill of Materials for Intel Coppermine/Camino Motherboards

(Typical Design)

Reference Manufacturer Part # Quantity

Description

Requirements/Comments

C1

AVX

TAJB475M010R5

1

4.7µF, 10V Capacitor

C2, C5

Panasonic

ECU-V1C105ZFX

2

1µF, 16V Capacitor

C3-4,C6

Panasonic

ECU-V1H104ZFX

3

100nF, 50V Capacitor

C8-9

Sanyo

6MV1000FA

2

1000µF, 6.3V Electrolytic

C10-11

Any

2

22µF, 6.3V Capacitor

Low ESR

CIN

Sanyo

10MV1200GX

3

1200µF, 10V Electrolytic IRMS = 2A

COUT

Sanyo

6MV1500GX

12

1500µF, 6.3V Electrolytic ESR ≤ 44mΩ

D1

Motorola

MBRD835L

1

8A Schottky Diode

L1

Any

Optional 2.5µH, 5A Inductor

DCR ~ 10mΩ

See Note 1.

L2

Any

1

1.3µH, 15A Inductor

DCR ~ 3mΩ

Q1

Q2

Q3-4

Fairchild

FDB6030L

Fairchild

FDB7030BL

Fairchild

FDB4030L

1

N-Channel MOSFET

RDS(ON) = 20mΩ @

VGS = 4.5V See Note 2.

1

N-Channel MOSFET

RDS(ON) = 10mΩ @

VGS = 4.5V See Note 2.

2

N-Channel MOSFET

R1

Any

1

33Ω

R2-3

Any

2

4.7Ω

R4

Any

1

10KΩ

R6

Any

1

10Ω

R7

Any

1

6.24KΩ

R8

N/A

1

30mΩ

PCB Trace Resistor

U1

Fairchild

RC5061M

1

DC/DC Controller

Notes:

1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply

with Intel dI/dt requirements. L1 may be omitted if desired.

2. For 12.5A designs using the TO-220 MOSFETs, heatsinks with thermal resistance ΘSA < 20°C/W should be used. For

designs using the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET

selections, refer to Applications Bulletins AB-8 and AB-15.

REV. 1.0.0 7/6/00

11

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