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RC5061 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
RC5061 Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
PRODUCT SPECIFICATION
RC5061
Table 2. RC5061 Application Bill of Materials
(Components based on Worst Case AnalysisSee Appendix for Details)
Reference Manufacturer Part # Quantity Description
C1
AVX
TAJB475M010R5
1
4.7µF, 10V Capacitor
C2, C5
Panasonic
ECU-V1C105ZFX
2
1µF, 16V Capacitor
C3-4,C6
Panasonic
ECU-V1H104ZFX
3
100nF, 50V Capacitor
C8-9
Sanyo
6MV1000FA
2
1000µF, 6.3V Electrolytic
C10-11
Any
2
22µF, 6.3V Capacitor
CIN
Sanyo
10MV1200GX
*
1200µF, 10V Electrolytic
COUT
Sanyo
6MV1500GX
*
1500µF, 6.3V Electrolytic
D1
Motorola
MBRD835L
1
8A Schottky Diode
L1
Any
Optional 2.5µH, 8A Inductor
L2
Q1
Q2
Q3-4
R1
R2-3
R4
R6
R7
U1
Any
Fairchild
FDB6030L
Fairchild
FDB7030BL
Fairchild
FDB4030L
Any
Any
Any
Any
Any
Fairchild
RC5061M
1
1.3µH, 20A Inductor
1
N-Channel MOSFET
1
N-Channel MOSFET
2
N-Channel MOSFET
1
33
2
4.7
1
10K
1
10
1
*
1
DC/DC Controller
Requirements/Comments
Low ESR
IRMS = 2A
ESR 44m
DCR ~ 10m
See Note 1.
DCR ~ 2m
RDS(ON) = 20m@
VGS = 4.5V See Note 2.
RDS(ON) = 10m@
VGS = 4.5V See Note 2.
Notes:
1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply
with Intel dI/dt requirements. L1 may be omitted if desired.
2. For 17.4A designs using the TO-220 MOSFETs, heatsinks with thermal resistance ΘSA < 20°C/W should be used. For designs
using the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET selections,
refer to Applications Bulletins AB-8 and AB-15.
*Refer to Appendix for values.
REV. 1.0.0 7/6/00
9

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