MJ10009 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MJ10009
ON Semiconductor
MJ10009 Datasheet PDF : 8 Pages
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MJ10009
TYPICAL CHARACTERISTICS
SWITCHING TIMES NOTE (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222.
PSWT = 1/2 VCC IC (tc) f
Typical inductive switching waveforms are shown in Fig-
] ure 7. In general, trv + tfi tc. However, at lower test cur-
rents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
RESISTIVE SWITCHING PERFORMANCE
2
v tP = 25 µs, DUTY CYCLE 2%
1
VCC = 250 V
IC/IB = 20
0.5
TJ = 25°C
tr
1.0
VCC = 250 V
IC/IB = 20
0.5
VBE(off) = 5 V
TJ = 25°C
ts
0.2
v tP = 25 µs, DUTY CYCLE 2%
tf
0.2
0.1
td
0.1
1
2
0.05
5
10
20
1
2
5
10
20
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. Turn-On Time
Figure 9. Turn-Off Time
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02
0.01 SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
ZθJC (t) = r(t) RθJC
P(pk)
RθJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) ZθJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
50 100 200
500 1 k
Figure 10. Thermal Response
Motorola Bipolar Power Transistor Device Data
5
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