FDD3680 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDD3680 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 6.1A
8
6
4
2
VD S = 15V
30V
50V
0
0
5
10
15
20
25
30
35
40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1
RθJ A = 96oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
3000
2500
f = 1MHz
VGS = 0
V
2000
CISS
1500
1000
500
COSS
CRSS
0
0
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJ A = 96°C/W
30
TA = 25°C
20
10
0
0.1
1
10
100
1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + R θJA
RθJA = 96°C/W
P(pk)
t1
t2
TJ - T A = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD3680 Rev B1(W)
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