DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HEF4538B-Q100(2018) View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
HEF4538B-Q100
(Rev.:2018)
NXP
NXP Semiconductors. NXP
HEF4538B-Q100 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Nexperia
3
ΔtW
(%)
2
1
0
-1
(1)
(2)
001aae740
HEF4538B-Q100
Dual precision monostable multivibrator
103
IDD
(µA)
102
001aae741
(1)
10
(2)
(3)
1
-2
0
4
8
12
16
VDD (V)
Tamb = 25 °C; ΔtW = 0 % at VDD = 10 V; REXT = 100 kΩ
(1) CEXT = 2 nF
(2) CEXT = 100 nF
Fig. 9. Typical normalized change in output pulse
width as a function of the supply voltage
10- 1
10- 2
10- 1
1
10
102
δ (%)
REXT = 100 kΩ; CEXT = 100 nF; CL = 50 pF; one monostable
multivibrator switching only
(1) VDD = 15 V
(2) VDD = 10 V
(3) VDD = 5 V
Fig. 10. Total supply current as a function of the output
duty factor
VI
negative
pulse
0V
90 %
VM
10 %
tf
tW
90 %
VM
10 %
tr
VI
positive
pulse
0V
10 %
tr
90 %
VM
tf
90 %
VM
10 %
tW
001aaj781
a. Input waveforms
VI
G
VDD
VO
DUT
RT
b. Test circuit
CL
001aag182
Test data is given in Table 10.
Definitions for test circuit:
DUT = Device Under Test.
CL = load capacitance including jig and probe capacitance.
RT = termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig. 11. Test circuit for measuring switching times
Table 10. Test data
Supply voltage
VDD
5 V to 15 V
Input
VI
VSS or VDD
tr, tf
≤ 20 ns
Load
CL
50 pF
HEF4538B_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 19 October 2018
© Nexperia B.V. 2018. All rights reserved
10 / 14

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]