70FL256P0XBHI20 View Datasheet(PDF) - Cypress Semiconductor
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70FL256P0XBHI20 Datasheet PDF : 16 Pages
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S70FL256P
7. DC Characteristics
This section summarizes the DC Characteristics of the device. Designers should check that the operating conditions in their circuit
match the measurement conditions specified in the Test Specifications in Table 8.1 on page 8, when relying on the quoted
parameters.
Table 7.1 DC Characteristics (CMOS Compatible)
Symbol
Parameter
Test Conditions
Limits
Unit
Min. Typ. (1) Max.
VCC Supply Voltage
2.7
3.6
V
VHH ACC Program Acceleration Voltage
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
VCC = 2.7V to 3.6V
8.5
9.5
n
0.3
0.3 x VCC
ig
0.7 x VCC
VCC +0.5
s IOL = 1.6 mA, VCC = VCC min.
0.4
De IOH = -0.1 mA
VCC - 0.6
V
V
V
V
V
ILI Input Leakage Current
ew ILO Output Leakage Current
for N ICC1
Active Power Supply Current - READ
(SO = Open)
ded ICC2
Active Power Supply Current (Page
Program)
n ICC3 Active Power Supply Current (WRR)
e ICC4 Active Power Supply Current (SE)
m ICC5 Active Power Supply Current (BE) (2)
om ISB1 Standby Current
ec IPD Deep Power-down Current
R Notes:
t 1. Typical values are at TAI = 25°C and VCC = 3V.
No 2. Bulk Erase is on a die per die basis, not for the whole device.
VCC = VCC Max,
VIN = VCC or GND
VCC = VCC Max,
VIN = VCC or GND
At 80 MHz
(Dual or Quad)
At 104 MHz (Serial)
At 40 MHz (Serial)
CS# = VCC
CS# = VCC
CS# = VCC
CS# = VCC
CS# = VCC;
SO + VIN = GND or VCC
CS# = VCC;
SO + VIN = GND or VCC
2
µA
2
µA
44
32
mA
15
26
mA
15
mA
26
mA
26
mA
160
500
µA
6
20
µA
Document Number: 002-00647 Rev. *F
Page 7 of 16
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