DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS (Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Supply Voltage
VDD
Input Low Voltage
VIL
Input High Voltage
VIH
* VIL ≥ – 2 V for t ≤ tKHKH/2.
** VIH ≤ 6 V for tKHKH/2.
Min
3.135
– 0.5*
2.0
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Input Leakage Current (0 V ≤ Vin ≤ VDD) (Excluding LBO)
Ilkg(I)
—
Output Leakage Current (0 V ≤ Vin ≤ VDD)
Ilkg(O)
—
AC Supply Current (Device Selected,
All Outputs Open,
All Inputs Toggling at Vin ≤ VIL or ≥ VIH,
Cycle Time ≥ tKHKH min)
MCM69F536C–8.5 IDDA
—
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
CMOS Standby Supply Current (Deselected,
Clock (K) Cycle Time ≥ tKHKH,
All Inputs Toggling at CMOS Levels
Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
MCM69F536C–8.5 ISB1
—
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
Clock Running Supply Current (Deselected,
Clock (K) Cycle Time ≥ tKHKH,
All Other Inputs Held to Static CMOS Levels
Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
MCM69F536C–8.5 ISB2
—
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
Output Low Voltage (IOL = 8 mA)
VOL
—
Output High Voltage (IOH = – 4 mA)
VOH
2.4
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. All addresses transition simultaneously low (LSB) and then high (HSB).
3. Data states are all zero.
4. Device in deselected mode as defined by the Truth Table.
Typ
3.3
—
—
Max
±1
±1
320
320
310
300
150
150
140
130
55
55
50
45
0.4
—
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Min
Typ
Input Capacitance
Input/Output Capacitance
Cin
—
4
CI/O
—
7
Max
Unit
3.6
V
0.8
V
5.5**
V
Unit Notes
µA
µA
mA 1, 2, 3
mA
4
mA
4
V
V
Max
Unit
6
pF
9
pF
MOTOROLA FAST SRAM
MCM69F536C
7