BUL45D2 View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

Manufacturer

BUL45D2

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

Motorola => Freescale 

10

IC/IB = 5

TYPICAL STATIC CHARACTERISTICS

10

IC/IB = 10

BUL45D2

TJ = 25°C

1

TJ = – 20°C

TJ = 125°C

0.1

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Base–Emitter Saturation Region

1

TJ = – 20°C

TJ = 25°C

TJ = 125°C

0.1

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Base–Emitter Saturation Region

10

10

IC/IB = 20

1

TJ = – 20°C

TJ = 25°C

TJ = 125°C

0.1

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Base–Emitter Saturation Region

1

25°C

125°C

0.1

0.01

0.1

1

10

REVERSE EMITTER–COLLECTOR CURRENT (AMPS)

Figure 10. Forward Diode Voltage

1000

100

10

1

1

Cib (pF)

TJ = 25°C

f(test) = 1 MHz

Cob (pF)

10

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

1000

TJ = 25°C

900

BVCER @ 10 mA

800

700

600

BVCER(sus) @ 200 mA

500

400

10

100

1000

RBE (Ω)

Figure 12. BVCER = f(ICER)

Motorola Bipolar Power Transistor Device Data

5

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