BUL45D2 View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

Manufacturer

BUL45D2

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

Motorola => Freescale 

1500

IBoff = IBon

VCC = 15 V

VZ = 300 V

1000 LC = 200 µH

TYPICAL SWITCHING CHARACTERISTICS

TJ = 125°C

TJ = 25°C

5

TJ = 125°C

TJ = 25°C

IC = 1 A

4

BUL45D2

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 µH

500

0

0

1

2

3

4

IC, COLLECTOR CURRENT (AMPS)

Figure 19. Inductive Switching,

tc @ IC/IB = 10

3

IC = 2 A

2

0

5

10

15

20

hFE, FORCED GAIN

Figure 20. Inductive Storage Time

450

IBoff = IBon

VCC = 15 V

350 VZ = 300 V

LC = 200 µH

250

TJ = 125°C

TJ = 25°C

IC = 1 A

150

IC = 2 A

50

2 4 6 8 10 12 14 16 18 20

hFE, FORCED GAIN

Figure 21. Inductive Fall Time

1400

1200

IBon = IBoff

VCC = 15 V

1000

VZ = 300 V

LC = 200 µH

800

TJ = 125°C

TJ = 25°C

IC = 2 A

600

400

200

IC = 1 A

0

2 4 6 8 10 12 14 16 18 20

hFE, FORCED GAIN

Figure 22. Inductive Crossover Time

3000

IB1 = IB2

IBon = IBoff

VCC = 15 V

VZ = 300 V

2000

LC = 200 µH

IB = 50 mA

1000

IB = 100 mA

IB = 200 mA

IB = 500 mA

IB = 1 A

0

0.5

1

1.5

2

2.5

3

3.5

4

IC, COLLECTOR CURRENT (AMPS)

Figure 23. Inductive Storage Time, tsi

Motorola Bipolar Power Transistor Device Data

360

dI/dt = 10 A/µs

TC = 25°C

340

320

300

0

0.5

1

1.5

2

IF, FORWARD CURRENT (AMP)

Figure 24. Forward Recovery Time tfr

7

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