T2550H600T View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

T2550H600T

Snubberless™ high temperature 25 A Triacs

STMicroelectronics 

Characteristics

1

Characteristics

T2550H

Table 2. Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Symbol

Test Conditions

Quadrant

Value

IGT (1)

VGT

VGD

IH (2)

IL

dV/dt(2)

(dI/dt)c(2)

VD = 12 V RL = 33 Ω

VD = VDRM RL = 3.3 kΩ Tj = 150° C

IT = 500 mA

IG = 1.2 IGT

VD = 67% VDRM gate open Tj = 150° C

Without snubber Tj = 150° C

I - II - III

I - II - III

I - II - III

I - II - III

MAX.

MAX.

MIN.

MAX.

MAX.

MIN.

MIN.

50

1.3

0.15

75

90

500

11.1

1. minimum IGT is guaranted at 10% of IGT max.

2. for both polarities of A2 referenced to A1.

Table 3. Static Characteristics

Symbol

VT (1)

Vto (1)

Rd (1)

IDRM

IRRM

Test Conditions

ITM = 35 A tp = 380 µs

Threshold voltage

Dynamic resistance

VDRM = VRRM

VDRM/VRRM = 400 V

(at mains peak voltage)

Tj = 25°C

Tj = 150°C

Tj = 150°C

Tj = 25°C

Tj = 150°C

Tj = 150°C

MAX.

MAX.

MAX.

MAX.

Value

1.5

0.80

19

5

8.5

5.5

1. for both polarities of A2 referenced to A1.

Table 4. Thermal resistance

Symbol

Parameter

Value

Rth(j-c) Junction to case (AC)

0.8

Unit

mA

V

V

mA

mA

V/µs

A/ms

Unit

V

V

mΩ

µA

mA

Unit

°C/W

2/8

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