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2N3725 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
2N3725
ST-Microelectronics
STMicroelectronics ST-Microelectronics
2N3725 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2N3725
HIGH VOLTAGE, HIGH CURRENT SWITCH
DESCRIPTION
The 2N3725 is a silicon planar epitaxial transistor
in TO-39 metal case It is a high-voltage, high current
switch used for memory applications requiring
breakdown voltages up to 50 V and operating cur-
rents to 1 A. Fast switching times are assured be-
cause of the high minimum fT (300 MHz) and tight
control on storage time.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCES
VCEO
VEBO
IC
Pto t
Tstg, Tj
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (V BE = 0)
Collector-emitter Voltage (IB = 0)
Emitter-base Voltage (IC = 0)
Collector Current
Total Power Dissipation at T amb 25 °C
at T c as e 25 °C
Storage and Junction Temperature
January 1989
V al u e
80
80
50
6
1
0.8
3.5
– 65 to 200
Unit
V
V
V
V
A
W
W
°C
1/6

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