2N4237 View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
2N4237 Datasheet PDF : 2 Pages
| |||
TECHNICAL DATA
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/581
Devices
Qualified Level
2N4237
2N4238
2N4239
JANTX
JANTXV
MAXIMUM RATINGS (TA = 250C Unless Otherwise noted)
Ratings
Symbol 2N4237 2N4238 2N4239 Units
Collector-Emitter Voltage
VCEO
40
60
80 Vdc
Collector-Base Voltage
VCBO
50
80
100 Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current
IC
1.0
Adc
Base Current
IB
Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2)
PT
0.5
Adc
1.0
W
6.0
W
Operating & Storage Temperature Range Top, Tstg
-65 to +200
°C
TO-39*
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 5.7 mW/0C for TA > +250C
2) Derate linearly 34 mW/0C for TC > +250C
29
0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
*See appendix A for
package outline
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N4237
2N4238
V(BR)CEO
50
Vdc
80
2N4239
100
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
Collector-Emitter Cutoff Current
0.5
mAdc
VCE = 90 Vdc, VBE = 1.5 Vdc
VCE = 50 Vdc
VCE = 80 Vdc
2N4237
ICEX
2N4238
100
nAdc
100
VCE = 10 Vdc
2N4239
100
Collector-Base Cutoff Current
VCE = 50 Vdc
VCE = 80 Vdc
2N4237
2N4238
ICBO
100
nAdc
100
VCE = 10 Vdc
2N4239
100
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
Share Link: 