IRFB4020PBF View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRFB4020PBF Datasheet PDF : 8 Pages
| |||
DIGITAL AUDIO MOSFET
PD - 97195
IRFB4020PbF
Features
• Key parameters optimized for Class-D audio
amplifier applications
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved
efficiency
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for
Key Parameters
VDS
RDS(ON) typ. @ 10V
200
V
80
m:
Qg typ.
18
nC
Qsw typ.
6.7
nC
RG(int) typ.
3.2
Ω
TJ max
175
°C
ruggedness
D
• Can deliver up to 300W per channel into 8Ω load in
half-bridge configuration amplifier
G
S
TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
f Parameter
Junction-to-Case
RθCS
RθJA
f Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Notes through
are on page 2
www.irf.com
Max.
200
±20
18
13
52
100
52
0.70
-55 to + 175
300
x x 10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
1.43
–––
62
Units
V
A
W
W/°C
°C
Units
°C/W
1
03/03/06
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