KMZ10B,112 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
KMZ10B,112 Datasheet PDF : 8 Pages
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Philips Semiconductors
Magnetic field sensor
Product specification
KMZ10B
DESCRIPTION
The KMZ10B is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications for current and field
measurement, revolution counters, angular or linear
position measurement, proximity detectors, etc.
handbook, halfpage H y
Hx
PINNING
PIN
1
2
3
4
SYMBOL
+VO
GND
−VO
VCC
DESCRIPTION
output voltage
ground
output voltage
supply voltage
QUICK REFERENCE DATA
SYMBOL
VCC
Hy
Hx
S
PARAMETER
bridge supply voltage
magnetic field strength
auxiliary field
sensitivity
MIN.
−
−2
−
−
Rbridge
Voffset
bridge resistance
offset voltage
CIRCUIT DIAGRAM
1.6
−1.5
123 4
MGD806
Fig.1 Simplified outline SOT195.
TYP.
5
−
3
4
−
−
MAX.
12
+2
−
−
2.6
+1.5
UNIT
V
kA/m
kA/m
m-k---A--V----⁄-⁄--m-V--
kΩ
mV/V
handbook, full pagewidth
MLC716
1998 Mar 31
1
+VO
2
GND
3
4
–VO VCC
Fig.2 Simplified circuit diagram.
2
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