KSC1173 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

KSC1173

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Performance Characteristics

4.5

4.0

3.5

3.0

I = 40mA

B

I = 30mA

B

I = 20mA

2.5

B

2.0

I = 15mA

B

1.5

I = 10mA

B

I = 8mA

1.0

B

I = 5mA

B

0.5

I = 3mA

B

0.0

0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 7.2

V [V], COLLECTOR-EMITTER VOLTAGE

CE

Figure 1. Static Characteristic

10

1

V (sat)

BE

I = 10 I

C

B

0.1

V (sat)

CE

0.01

0.01

0.1

1

I [A], COLLECTOR CURRENT

C

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100

I =0

E

f=1MHz

10

1

10

100

V [V], COLLECTOR-BASE VOLTAGE

CB

Figure 5. Collector Output Capacitance

1000

100

V = 2V

CE

10

0.01

0.1

1

I [A], COLLECTOR CURRENT

C

Figure 2. DC current Gain

4.5

V =2V

CE

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

V (V), BASE-EMITTER VOLTAGE

BE

Figure 4. Base-Emitter On Voltage

10

I MAX(Pulse)

C

I MAX(DC)

C

Tc=25?

1

*10ms

*50ms

1ms

Thermal

limitation

S/B Limitation

*Single Pulse

0.1

1

10

100

V [V], COLLECTOR-EMITTER VOLTAGE

CE

Figure 6. Safe Operating Area

© 2009 Fairchild Semiconductor Corporation

KSC1173 Rev. A2

3

www.fairchildsemi.com

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