PEMX1,115 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMX1,115 Datasheet PDF : 7 Pages
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NXP Semiconductors
NPN general purpose double transistor
Product data sheet
PEMX1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CONDITIONS
notes 1 and 2
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
MIN.
MAX.
UNIT
VCB = 30 V; IE = 0
VCB = 30 V; IE = 0; Tj = 150 °C
VEB = 4 V; IC = 0
VCE = 6 V; IC = 1 mA
IC = 50 mA; IB = 5 mA; note 1
−
100
nA
−
10
μA
−
100
nA
120
−
−
200
mV
VCB = 12 V; IE = Ie = 0; f = 1MHz
−
1.5
IC = 2 mA; VCE = 12 V; f = 100 MHz 100
−
pF
MHz
2001 Nov 07
3
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