MBR1070CT View Datasheet(PDF) - LiteOn Technology

Part Name

Description

Manufacturer

MBR1070CT

SCHOTTKY BARRIER RECTIFIERS

LiteOn Technology 

LITE-ON

SEMICONDUCTOR

MBR1070CT thru 10100CT

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 70 to 100 Volts

FORWARD CURRENT - 10 Amperes

FEATURES

Metal of silicon rectifier,majority carrier conducton

Guard ring for transient protection

Low power loss, high efficiency

High current capability, low VF

High surge capacity

Plastic package has UL flammability classification 94V-0

For use in low voltage,high frequency inverters,free

whelling,and polarity protection applications

IEC 61000-4-2, level 4 (ESD), >15KV (air)

MECHANICAL DATA

Case : TO-220AB molded plastic

Polarity : As marked on the body

Weight : 0.08 ounces, 2.24 grams

Mounting position : Any

Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)

TO-220AB

B

C

K

PIN

12 3

I

HH

PIN 1

PIN 3

L

M

D

A

E

F

G

J

N

PIN 2

CASE

TO-220AB

DIM. MIN. MAX.

A

14.40 15.20

B

9.65 10.67

C

2.54 3.43

D

5.84 6.86

E

8.26 9.28

F

-

4.20

G

12.70 14.73

H

2.29 2.79

I

0.51 1.14

J

0.30 0.64

K

3.53 4.09

L

3.56 4.83

M

1.14 1.40

N

2.03 2.92

All Dimensions in millimeter

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

CHARACTERISTICS

SYMBOL MBR1070CT

Maximum Recurrent Peak

Reverse Voltage

@IR=100uA VRRM

70

Maximum RMS Voltage

@IR=100uA VRMS

49

Maximum DC Blocking Voltage @IR=100uA

VDC

70

Maximum Average Forward RectifiedCurrent

at Tc=100 ℃ (See Fig.1)

I(AV)

Peak Forward Surge Current

8.3ms single half sine-wave

IFSM

superimposed on rated load

Voltage Rate of Change (Rated VR)

dv/dt

Maximum Forward

Voltage, (Note 1)

@IF=5A TJ =25 ℃

@IF=5A TJ =125 ℃

VF

@IF=10A TJ =25 ℃

@IF=10A TJ =125 ℃

Maximum DC Reverse Current @TJ =25 ℃

IR

at Rated DC Blocking Voltage

@TJ =125 ℃

Typical Junction Capacitance, per element (Note

2)

CJ

Typical Thermal Resistance (Note 3)

R0JC

Operating Temperature Range

TJ

Storage Temperature Range

TSTG

NOTES : 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Thermal Resistance Junction to Case.

MBR1080CT MBR1090CT MBR10100CT UNIT

80

90

56

63

80

90

10

100

V

70

V

100

V

A

120

10000

0.85

0.75

0.95

0.85

0.01

15

300

3.0

-55 to +150

-55 to +175

A

V/us

V

mA

pF

℃/W

℃

℃

REV. 8, Jul-2012, KTHC13

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