BC857BS View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BC857BS Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
PNP general purpose double transistor
Product specification
BC857BS
FEATURES
• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and boardspace
• No mutual interference between the transistors.
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP double transistor in an SC-88; SOT363 plastic
package. NPN complement: BC847BS.
MARKING
TYPE NUMBER
BC857BS
MARKING CODE
3Ft
handbook, halfpage
654
12 3
Top view
65 4
TR2
TR1
123
MAM339
Fig.1 Simplified outline (SC-88; SOT363)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
Ptot
total power dissipation
open emitter
open base
open collector
Tamb ≤ 25 °C
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
−50
V
−
−45
V
−
−5
V
−
−100 mA
−
−200 mA
−
−200 mA
−
200
mW
−65
+150 °C
−
150
°C
−65
+150 °C
−
300
mW
1999 Apr 26
2
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