BC857BS View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BC857BS Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose double transistor
Product specification
BC857BS
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Per device
Rth j-a
thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
IE = 0; VCB = −30 V
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −2 mA; VCE = −5 V
IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA; note 1
IC = −10 mA; IB = −0.5 mA
IC = −2 mA; VCE = −5 V
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = ic = 0; VEB = −500 mV; f = 1 MHz
IC = −10 mA; VCE = −5 V; f = 100 MHz
−
−
−
200
−
−
−
−600
−
−
100
−
−
−
−
−
−
−755
−655
−
10
−
−15
−5
−100
450
−100
−400
−
−750
2.2
−
−
nA
µA
nA
mV
mV
mV
mV
pF
pF
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 26
3
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