TLV4976-2K View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
TLV4976-2K
Infineon Technologies
TLV4976-2K Datasheet PDF : 17 Pages
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3.2
Absolute Maximum Ratings
TLV4976-2K
Specification
Table 2 Absolute Maximum Rating Parameters
Parameter
Symbol
Limit Values Unit Note / Test Condition
Min.
Max.
Maximum Ambient Temperature TA
Maximum Junction Temperature TJ
Supply Voltage
VS
Supply current through protection IS
device
-40
125
°C
-40
150
°C
-18
18
V
-50
+50
mA
Storage temperature
TS
-40
150
°C
Magnetic flux density
B
–
unlimited mT
ESD robustness HBM1)
VESD,HBM
4
kV R = 1.5kΩ,
C = 100pF
TA = 25°C
1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method
3015.7
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
3.3
Operating Range
The following operating conditions must not be exceeded in order to ensure correct operation of the Hall Effect
Switch.
All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned.
Table 3 Operating Conditions Parameters
Parameter
Symbol
Min.
Supply voltage
VS
3
Junction temperature
Tj
- 40
Values
Typ. Max.
18
85
Unit
V
°C
Note / Test Condition
3.4
Electrical and Magnetic Characteristics
Product characteristics involve the spread of values guaranteed within the specified voltage and ambient
temperature range. Typical characteristics are the median of the production.
Table 4 General Electrical Characteristics1)
Parameter
Symbol
Min.
Supply current low
ISLOW
5
Supply current high
ISHiGH
12
Values
Typ. Max.
6
7
14
17
Unit
mA
mA
Note / Test Condition
B > BRP
VS = 3V ... 18V
B < BOP
VS = 3V ... 18V
Data Sheet
11
Rev. 1.1, 2010-08-02
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