MMDT2227 View Datasheet(PDF) - Secos Corporation.
Part Name
Description
Manufacturer
MMDT2227 Datasheet PDF : 6 Pages
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Elektronische Bauelemente
MMDT2227
NPN-PNP Silicon
Multi-Chip Transistor
RoHS Compliant Product
* Features
SOT-363
Power dissipation
PCM : 0.2 W (Tamp.= 25 OC)
Collector current
ICM : 0.2/-0.2 A
Collector-base voltage
V(BR)CBO : 75/-60 V
Operating & Storage junction Temperature
Tj, Tstg : -55OC~ +150OC
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.018(0.46)
.010(0.26)
C2
B1
E1
.043(1.10)
.035(0.90)
8o
0o
.053(1.35)
.045(1.15)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
E2
B2
C1
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise specified)
NPN2222A ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO Ic=10μA,IE=0
75
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO Ic=10mA,IB=0
V(BR)EBO IE=10μA,IC=0
40
V
6
V
Collector cut-off current
ICBO
VCB=60V,IE=0
10
nA
Emitter cut-off current
IEBO
VEB=3V,IC=0
10
nA
DC current gain
hFE
VCE=10V,IC=150mA
100
300
Collector-emitter saturation voltage
VCE(sat)1 IC=150mA,IB=15mA
VCE(sat)2 IC=500mA,IB=50mA
0.3
V
1
V
Base -emitter saturation voltage
VBE(sat)1 IC=150mA,IB=15mA
VBE(sat)2 IC=500mA,IB=50mA
1.2
V
2
V
Transition frequency
fT
VCE=20V,IC=20mA,f=100MHz
300
MHz
Collector output capacitance
Noise Figure
Cob
VCB=10V,IE=0,f=1MHz
NF
VCE=10V,Ic=0.1mA,
f=1KHZ,Rs=1KΩ
8
pF
4
dB
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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