MMDT2227 View Datasheet(PDF) - Secos Corporation.
Part Name
Description
Manufacturer
MMDT2227 Datasheet PDF : 6 Pages
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Elektronische Bauelemente
MMDT2227
NPN-PNP Silicon
Multi-Chip Transistor
NPN2222
10
8.0
IC = 1.0 mA, RS = 150 Ω
500 µA, RS = 200 Ω
100 µA, RS = 2.0 kΩ
6.0
50 µA, RS = 4.0 kΩ
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, Frequency (kHz)
50 100
Figure 7. Frequency Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
Reverse Voltage (V)
Figure 9. Capacitances
20 30 50
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
1.0 V
VBE(on) @ VCE = 10 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100 200
I C, Collect Current (mA)
500 1.0 k
Figure 11. “On” Voltages
10
f = 1.0 kHz
8.0
IC = 50 µA
100 µA
6.0
500 µA
1.0 mA
4.0
2.0
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, Source Resistance (OHMS)
Figure 8. Source Resistance Effects
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, Collector Current (mA)
50 70 100
Figure 10. Current–Gain Bandwidth Product
+0.5
0
RqVC for VCE(sat)
– 0.5
– 1.0
– 1.5
– 2.0
RqVB for VBE
– 2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, Collect Current (mA)
Figure 12. Temperature Coefficients
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
Page 4 of 6
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