2N6299 View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
2N6299 Datasheet PDF : 2 Pages
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TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/540
Devices
2N6298
2N6299
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ TC = 00C (1)
@
TC = 1000C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 0.428 W/0C above TC > 00C
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TOP,TSTG
Symbol
RθJC
2N6298 2N6299
60
80
60
80
5.0
120
8.0
75
32
-65 to +175
Max.
2.33
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N6298
2N6299
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 30 Vdc
2N6298
ICEO
VCE = 40 Vdc
Collector-Emitter Cutoff Current
2N6299
VCE = 60 Vdc, VBE = 1.5 Vdc
2N6298
ICEX
VCE = 80 Vdc, VBE = 1.5 Vdc
2N6299
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
Units
Vdc
Vdc
Vdc
mAdc
Adc
W
W
0C
Unit
0C/W
TO-66* (TO-213AA)
*See appendix A for
package outline
Min. Max.
Unit
60
Vdc
80
0.5
mAdc
0.5
0.5
mAdc
0.5
2.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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