2N6299 View Datasheet(PDF) - Microsemi Corporation

Part Name

Description

Manufacturer

2N6299

PNP DARLINGTON POWER SILICON TRANSISTOR

Microsemi Corporation 

2N6298, 2N6299 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (2)

Forward-Current Transfer Ratio

IC = 1.0 Adc, VCE = 3.0 Vdc

IC = 4.0 Adc, VCE = 3.0 Vdc

IC = 8.0 Adc, VCE = 3.0 Vdc

Collector-Emitter Saturation Voltage

IC = 4.0 Adc, IB = 16 mAdc

IC = 8.0 Adc, IB = 80 mAdc

Base-Emitter Saturation Voltage

IC = 8.0 Adc, IB = 80 mAdc

Base-Emitter Voltage

IC = 4.0 Adc, VCE = 3.0 Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz

Small-Signal Short-Circuit Forward Current Transfer Ratio

IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On Time

VCC = 30 Vdc; IC = 4.0 Adc; IB1 = 16 mAdc

Turn-Off Time

VCC = 30 Vdc; IC = 4.0 Adc; IB1 = 16 mAdc

SAFE OPERATING AREA

DC Tests

TC = +250C, 1 Cycle, t = 1.0 s

Test 1

VCE = 8.0 Vdc, IC = 8.0 Adc

Test 2

VCE = 20 Vdc, IC = 2.0 Adc

Test 3

VCE = 60 Vdc, IC = 100 mAdc

2N6298

VCE = 80 Vdc, IC = 100 mAdc

2N6299

(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(sat)

VBE(on)

hfe

hfe

Cobo

ton

toff

Min. Max. Unit

500

750 18,000

100

2.0

Vdc

3.0

4.0

Vdc

2.8

Vdc

25

350

300

200

pF

2.0

µs

8.0

µs

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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