BC856A(2018) View Datasheet(PDF) - Diotec Semiconductor Germany
Part Name
Description
Manufacturer
BC856A Datasheet PDF : 2 Pages
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BC856 ... BC860
Characteristics
Tj = 25°C
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V
- IC = 10 µA
Group A
Group B
hFE
Group C
- IC = 2 mA
Group A
Group B
hFE
Group C
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1)
- IC = 10 mA - IB = 0.5 mA
- IC = 100 mA - IB = 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- VCEsat
- IC = 10 mA - IB = 0.5 mA
- IC = 100 mA - IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VBEsat
- VCE = 5 V
- VCE = 5 V
- IC = - 2 mA
- IC = - 10 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VBE
- VCE = 30 V
- VCE = 30 V
Tj = 125°C
Emitter-Base cutoff current
E open
- ICBO
- VEB = 5 V
Gain-Bandwidth Product – Transitfrequenz
C open
- IEBO
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA
RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz
BC856 ... BC858
BC859 ... BC860
F
Typical thermal resistance junction to ambient
Typischer Wärmewiderstand Sperrschicht – Umgebung
RthA
Min.
Typ.
Kennwerte
Max.
–
90
–
–
150
–
–
270
–
125
180
250
220
290
475
420
520
800
–
–
300 mV
–
–
650 mV
–
700 mV
–
–
900 mV
–
600 mV
–
–
750 mV
–
820 mV
–
–
15 nA
–
–
4 µA
–
–
100 nA
100 MHz
–
–
–
4.5 pF
–
–
9 pF
–
–
2 dB
10 dB
–
1.2 dB
4 dB
< 420 K/W 2)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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