DCR2560A75(2009) View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DCR2560A75 Datasheet PDF : 10 Pages
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SEMICONDUCTOR
DCR2560A85
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
dI/dt Rate of rise of on-state current
From 67% VDRM to 2x IT(AV) Repetitive 50Hz
Gate source 30V, 10 ,
Non-repetitive
tr < 0.5µs, Tj = 125°C
VT(TO) Threshold voltage – Low level
500 to 1600A at Tcase = 125°C
Threshold voltage – High level
1600 to 4000A at Tcase = 125°C
rT
On-state slope resistance – Low level
500A to 1600A at Tcase = 125°C
On-state slope resistance – High level
1600A to 4000A at Tcase = 125°C
tgd
Delay time
tq
Turn-off time
VD = 67% VDRM, gate source 30V, 10
tr = 0.5µs, Tj = 25°C
IT = 3000A, Tj = 125°C,
VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 3000A, Tj = 125°C, dI/dt – 1A/µs,
VRpeak ~5100V, VR ~ 3400V
-
-
-
-
-
-
-
-
-
5150
300
1500
100
200
0.9
1.18
0.65
0.46
3
1000
7950
mA
V/µs
A/µs
A/µs
V
V
m
m
µs
µs
µC
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
3/10
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