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Part Name
Description
DCR2560A70(2009) View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DCR2560A70
(Rev.:2009)
Phase Control Thyristor
Dynex Semiconductor
DCR2560A70 Datasheet PDF : 10 Pages
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SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
Gate trigger voltage
V
GD
Gate non-trigger voltage
I
GT
Gate trigger current
I
GD
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°C
At V
DRM,
T
case
= 125°C
V
DRM
= 5V, T
case
= 25°C
V
DRM
= 5V, T
case
= 25°C
DCR2560A85
Max. Units
1.5
V
0.3
V
400 mA
20
mA
CURVES
7000
6000
5000
4000
3000
2000
1000
min 125°C
max 125°C
min 25°C
max 25°C
0
1.0
2.0
3.0
4.0
5.0
Instantaneous on-state voltage V
T
- (V)
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D. I
T
Where A = -0.224010
B = 0.1725829
C = 0.000292
D = 0.01039
these values are valid for T
j
= 125°C for I
T
500A to 4200A
4/10
www.dynexsemi.com
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