BUV47A View Datasheet(PDF) - Bourns, Inc
Part Name
Description
Manufacturer
BUV47A Datasheet PDF : 7 Pages
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BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
● Rugged Triple-Diffused Planar Construction
● 9 A Continuous Collector Current
● 1000 Volt Blocking Capability
B
C
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-emitter voltage (VBE = -2.5 V)
RATING
Collector-emitter voltage (RBE = 10 Ω)
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp ≤ 5 ms, duty cycle ≤ 2%.
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
SYMBOL
VCEX
VCER
VCEO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
VALUE
850
1000
850
1000
400
450
9
15
3
6
120
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
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