BUV47 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BUV47 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV47 BUV47B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH
VCEsat-1
Collector-emitter
saturation voltage
BUV47 IC=5A; IB=1A
BUV47B IC=6A; IB=1.2A
VCEsat-2
Collector-emitter
saturation voltage
BUV47 IC=8A; IB=2.5A
BUV47B IC=9A; IB=3A
VBEsat
Base-emitter
saturation voltage
BUV47 IC=5A; IB=1A
BUV47B IC=6A; IB=1.2A
ICEX
Collector cut-off current
VCE=850V ;VBE=-2.5V
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=10A ; VCE=5V
Switching times :
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A IB1=- IB2=1.0A
VCC=150V
MIN TYP. MAX UNIT
10
V
400
V
1.5
V
3.0
V
1.6
V
0.15 mA
1.0 mA
7
10
14
1.0 μs
3.0 μs
0.8 μs
2
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