HM64YGB36100 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
HM64YGB36100 Datasheet PDF : 21 Pages
| |||
HM64YGB36100 Series
DC Characteristics
Parameter
Input leakage current
Output leakage current
Standby current
VDD operating current, excluding output drivers
Quiescent active power supply current
Maximum power dissipation, including output drivers
(Ta = 0 to +85°C, VDD = 2.5 V ± 5%)
Symbol Min Max Unit Notes
ILI
2
µA 1
ILO
5
µA 2
ISBZZ
150 mA 3
IDD
550 mA 4
IDD2
200 mA 5
P
2.3 W
6
Parameter
Symbol
Min
Typ
Max
Unit Notes
Output low voltage
VOL
VSS
VSS + 0.4
V7
Output high voltage
VOH
VDDQ − 0.4
VDDQ
V8
ZQ pin connect resistance
RQ
250
Ω
Output “Low” current
IOL
(VDDQ/2) / {(RQ/5) − 15%}
(VDDQ/2) / {(RQ/5) + 15%} mA 9, 11
Output “High” current
IOH
(VDDQ/2) / {(RQ/5) + 15%}
(VDDQ/2) / {(RQ/5) − 15%} mA 10, 11
Notes: 1. 0 ≤ VIN ≤ VDDQ for all input pins (except VREF, ZQ, M1, M2 pin)
2. 0 ≤ VOUT ≤ VDDQ, DQ in high-Z
3. All inputs (except clock) are held at either VIH or VIL, ZZ is held at VIH, IOUT = 0 mA. Specification is
guaranteed at +75°C junction temperature.
4. IOUT = 0 mA, read 50% / write 50%, VDD = VDD max, frequency = min. cycle
5. IOUT = 0 mA, read 50% / write 50%, VDD = VDD max, frequency = 3 MHz
6. Output drives a 12 pF load and switches every cycle. This parameter should be used by the SRAM designer
to determine electrical and package requirements for the SRAM device.
7. RQ = 250 Ω, IOL = 6.8 mA
8. RQ = 250 Ω, IOH = −6.8 mA
9. Measured at VOL = 1/2 VDDQ
10. Measured at VOH = 1/2 VDDQ
11. The total external capacitance of ZQ pin must be less than 7.5 pF.
Rev.1.00 Jun 27, 2005 page 7 of 19
Share Link: 