2SB857 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SB857 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SB857
2SB858
IC=-50mA; RBE=∞
V(BR)CBO Collector-base breakdown voltage IC=-10μA; IE=0
V(BR)EBO Emitter-base breakdown votage
IE=-10μA; IC=0
VCEsat Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A
VBE
Base-emitter voltage
IC=-1A ; VCE=-4V
ICBO
Collector cut-off current
VCB=-50V; IE=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
hFE-2
DC current gain
IC=-0.1A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-4V
hFE-1 classifications
B
C
D
60-120 100-200 160-320
Product Specification
2SB857 2SB858
MIN TYP. MAX UNIT
-50
V
-60
-70
V
-5
V
-1.0
V
-1.0
V
-1
μA
60
320
35
15
MHz
2
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