VS-MURB2020CTPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

VS-MURB2020CTPBF

Ultrafast Rectifier, 2 x 10 A FRED Pt®

Vishay Semiconductors 

VS-MURB2020CTPbF, VS-MURB2020CT-1PbF

www.vishay.com

Vishay Semiconductors

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V

-

-

Reverse recovery time

IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V

-

19

trr

TJ = 25 °C

-

21

TJ = 125 °C

-

35

Peak recovery current

IRRM

TJ = 25 °C

IF = 10 A

-

dIF/dt = 200 A/μs

1.9

TJ = 125 °C

VR = 160 V

-

4.8

Reverse recovery charge

TJ = 25 °C

Qrr

TJ = 125 °C

-

25

-

78

MAX.

35

-

-

-

-

-

-

-

UNITS

ns

A

nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and

storage temperature range

Thermal resistance,

junction to case per leg

Thermal resistance,

junction to ambient per leg

Thermal resistance,

case to heatsink

TJ, TStg

RthJC

RthJA

RthCS

Mounting surface, flat, smooth and

greased

Weight

Mounting torque

Marking device

Case style TO-263AB (D2PAK)

Case style TO-262AA

MIN.

-65

-

-

-

-

-

6.0

(5.0)

TYP.

-

MAX.

175

-

2.5

-

50

0.5

-

2.0

-

0.07

-

-

12

(10)

MURB2020CT

MURB2020CT-1

UNITS

°C

°C/W

g

oz.

kgf · cm

(lbf · in)

Revision: 10-Jul-15

2

Document Number: 94083

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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