DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M62009P View Datasheet(PDF) - Renesas Electronics

Part Name
Description
Manufacturer
M62009P Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
M62009L/P/FP
Absolute Maximum Ratings
Item
Supply voltage
Output sink current
Power dissipation
Symbol
VCC
Isink
Pd
Thermal derating
Operating temperature
Storage temperature
Kθ
Topr
Tstg
Ratings
8
5
800
625
440
4.4
–20 to +75
–40 to +125
(Ta = 25°C, unless otherwise noted)
Unit
Conditions
V
mA
mW
8-pin SIP
8-pin DIP
8-pin SOP
mW/°C
Ta 25°C
°C
°C
Electrical Characteristics
Item
Detection voltage
Reference voltage
Hysteresis voltage
Symbol
VS1-1
VS1-2
VS2
VS
Min
3.8
1.85
1.23
Circuit current
ICC1
ICC2-1
ICC2-2
Delay time
td
Output saturation voltage
Vsat
Reset output response time tRESET
Interruption output reset time tINT
Typ
4.0
2.00
1.28
87
7
5
1
50
0.2
30
100
Max
4.2
2.15
1.33
15
10
3
0.4
Unit
V
V
mV
µA
ms
V
µs
µs
(Ta = 25°C, unless otherwise noted)
Test Conditions
Increase of VCC1
Decrease of VCC1
Decrease of V1
VCC2 = Detection voltage of hysteresis voltage
(Detection voltage = 4V setup)
VCC1 = VCC2 = 5V
VCC1 = 5V, VCC2 = 0V
VCC1 = 2.5V, VCC2 = 0V
Cd = 0.33µF
VIN = 5V, IO = 4mA (NMOS)
Time between VCC1 (when falling) = VS1-2 and
output of RESET signal
Time between VCC2 (when falling) = VS2 and
output of INT signal
Rev.1.00 Sep 14, 2005 page 3 of 6

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]